"calibration of Monte Carlo Charge Transport Simulation Parameters"

As a consequence of favorable macroscopic material properties such as thermal conductivity, piezoelectricity, breakdown field, and electron mobility, wurtzite III-nitride materials are currently being pursued for a plethora of diverse applications, including RF power amplification 1 ' 2 , power switching 3 , surface acoustic wave chemical and biological sensors 4 , solar-blind photodetectors s , as well as lasers and light emitting diodes in the green to deep UV range 6 ' 7 . Although the performance of many of these devices has been superlative, the wurtzite III-nitrides are a relatively new material system, and our knowledge of some of their more fundamental material properties is still incomplete at best. Additionally, issues associated with material quality such as dislocations, point defects, clustering, etc., may influence device operation. These considerations naturally limit the precision of our understanding of device operation, and pose a significantly greater challenge to the simulation of III-nitride devices than would be the case for any of the more mature material systems. In this study, static IN characteristics of the present 0.25 p.m 20 short-gate A 1GaN/GaN HFET technology are analyzed, and used to 15 refine our understanding of microscopic material parameters required as input for fall band Monte Carlo device 10